advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 650v fast switching characteristic r ds(on) 1 simple drive requirement i d 10a description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ e as single pulse avalanche energy 2 mj i ar avalanche current a t stg storage temperature range t j operating junction temperature range thermal data symbol parameter value units rthj-c thermal resistance junction-case max. 3.4 /w rthj-a thermal resistance junction-ambient max. 65 /w data & specifications subject to change without notice 36 linear derating factor 0.3 parameter rating 650 6.4 -55 to 150 ap2761i-a 10 30 10 rohs-compliant product 200202074-1/4 65 37 -55 to 150 g d s g d s to-220cfm(i) a p2761 series are specially designed as main switching devices for universal 90~265vac off-line ac/dc converter applications. to-220cfm type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 650 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.6 - v/ r ds(on) static drain-source on-resistance v gs =10v, i d =5a - - 1 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =5a - 4.8 - s i dss drain-source leakage current (t j =25 o c) v ds =600v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =480v , v gs =0v - - 100 ua i gss gate-source leakage v gs =30v - - 100 na q g total gate charge 3 i d =10a - 53 - nc q gs gate-source charge v ds =520v - 10 - nc q gd gate-drain ("miller") charge v gs =10v - 15 - nc t d(on) turn-on delay time 3 v dd =320v - 16 - ns t r rise time i d =10a - 20 - ns t d(off) turn-off delay time r g =10 , v gs =10v - 82 - ns t f fall time r d =32 -36- ns c iss input capacitance v gs =0v - 2770 - pf c oss output capacitance v ds =15v - 320 - pf c rss reverse transfer capacitance f=1.0mhz - 8 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 i s =10a, v gs =0v - - 1.5 v trr reverse recovery time i s =10a, v gs =0v, - 610 - ns qrr reverse recovery charge di/dt=100a/s - 8.64 - c notes: 1.pulse width limited by max. junction temperature. 2.starting t j =25 o c , v dd =50v , l=1.2mh , r g =25 , i as =10a. 3.pulse test this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. ap2761i-a 2/4 this product has been qualified for consumer market. applications or uses as criterial component in life support
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 ap2761i-a 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 2 4 6 8 10 12 14 0 5 10 15 20 25 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 5.0v v g =4.0v 10v 6.0v 0 2 4 6 8 0 5 10 15 20 25 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =4.0v 4.5v 10v 5.0v 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =5a v g =10v 0.01 0.1 1 10 100 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd , source-to-drain voltage (v) i s (a) t j = 25 o c t j = 150 o c 1 2 3 4 5 -50 0 50 100 150 t j , junction temperature ( o c) v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4/4 ap2761i-a 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 4 8 12 16 0 20406080 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =10a v ds =330v v ds =410v v ds =520v 1 100 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0.1 1 10 100 1 10 100 1000 10000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 10us 100us 1ms 10ms 100ms
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